Heterogeneous integration of a III–V quantum dot laser on high thermal conductivity silicon carbide
Rosalyn Koscica, Yating Wan, William He, M. J. Kennedy, John E. Bowers
Abstract
Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III–V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III–V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates with high temperature stability. A large T 0 of 221 K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.
Topics & Concepts
Silicon carbideThermal conductivityMaterials scienceOpticsLaserQuantum dotOptoelectronicsSiliconQuantum dot laserSemiconductor laser theorySemiconductorPhysicsComposite materialPhotonic and Optical DevicesSemiconductor Quantum Structures and DevicesNanowire Synthesis and Applications