High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching
Yuan Zhu, J. K. Liang, M. Vairavel, Tomas Nyberg, Daniel Primetzhofer, Xun Shi, Zhen Zhang
Abstract
is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.
Topics & Concepts
Materials scienceMemristorNanotechnologyOptoelectronicsComposite materialElectronic engineeringEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering