Highly efficient and stable perovskite solar cells based on E‐beam evaporated SnO2 and rational interface defects passivation
Mengjia Li, Lihua Zhu, Xian Zhang, Chen Wang, Deyu Gao, Jiaheng Han, Chunlei Chen, Chunlei Chen, Hongwei Song, Sai Xu, Cong Chen, Cong Chen
Abstract
Abstract Owing to the significant roles in balancing carrier transport, bandgap alignment, and perovskite crystallization, realizing high‐quality electron transport layers (ETLs) and their effective electronic contact with the perovskite photoactive layer is crucial for future commercialization of perovskite solar cells (PSCs). Here, a high‐quality SnO 2 ETL is firstly deposited at room temperature via the low‐cost electron beam evaporation (E‐beam) technology to help achieve an impressive PCE of 18.88% for rigid PSCs and a PCE of 15.73% for flexible devices. Then we introduced a novel passivating ligand molecule, 11 Maleimidoundecanoic acids (11MA), to help induce functional defects passivation at the interface of SnO 2 /Perovskite to coordinate with Pb 2+ in perovskite and Sn 4+ in SnO 2 via the functional groups (‐C = O, ‐COOH). As a result, 11MA could help achieve the best PCE of 20.94% with negligible hysteresis for rigid devices. Also, doping 11MA in the perovskite photoactive layer further enhanced the PCE to 22.08% with much improved 2000 hours ambient stabilities. Finally, we fabricated different large‐area rigid devices (10, 40, 100, and 600 mm 2 ) toward speeding up the commercialization of PSCs by industrial E‐beam technology and rational defects passivation strategies.