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Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition

Youkyoung Oh, Hyo‐Bae Kim, Seungwon Lee, Min Ji Jeong, Tae Joo Park, Ji‐Hoon Ahn

2022Ceramics International19 citationsDOI

Topics & Concepts

FerroelectricityMaterials scienceAntiferroelectricityThin filmAnnealing (glass)CrystallizationDielectricChemical engineeringOptoelectronicsNanotechnologyComposite materialEngineeringFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices
Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition | Litcius