Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs
Guanjie Li, Xiaomin Li, Xinke Liu, Anran Gao, Junliang Zhao, Fawang Yan, Qiuxiang Zhu
Topics & Concepts
Materials scienceLayer (electronics)OptoelectronicsFerroelectricityNanotechnologyDielectricFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials