Litcius/Paper detail

Impacts of core gate thickness and Ge content variation on the performance of Si1−xGex source/drain Si–nanotube JLFET

Anchal Thakur, Rohit Dhiman

2021Journal of Computational Electronics15 citationsDOI

Topics & Concepts

Materials scienceThreshold voltageCore (optical fiber)Quantum dotOptoelectronicsDrain-induced barrier loweringGermaniumSubthreshold conductionVoltageSubthreshold slopeTransistorNanotubeNanotechnologyElectrical engineeringSiliconCarbon nanotubeComposite materialEngineeringAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications
Impacts of core gate thickness and Ge content variation on the performance of Si1−xGex source/drain Si–nanotube JLFET | Litcius