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Effect of vacancy defects and hydrogen, oxygen and nitrogen atomic occupation on the mechanical and electronic properties of C40-type VSi2

Xinyue Chen, Xudong Zhang, Feng Wang

2023Chemical Physics Letters13 citationsDOI

Topics & Concepts

Vacancy defectMaterials scienceHydrogenBrittlenessElectronic structureSilicideCrystallographyMetallurgySiliconChemistryComputational chemistryOrganic chemistrySemiconductor materials and interfacesIntermetallics and Advanced Alloy PropertiesBoron and Carbon Nanomaterials Research
Effect of vacancy defects and hydrogen, oxygen and nitrogen atomic occupation on the mechanical and electronic properties of C40-type VSi2 | Litcius