Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J of ∼6 fA/cm2
Haiyang Xing, Zunke Liu, Zhenhai Yang, Mingdun Liao, Qinqin Wu, Na Lin, Wei Liu, Chuan‐Fan Ding, Yuheng Zeng, Baojie Yan, Jichun Ye
Topics & Concepts
PassivationPlasma-enhanced chemical vapor depositionMaterials sciencePlasmaDangling bondEtching (microfabrication)Remote plasmaSiliconAnalytical Chemistry (journal)Layer (electronics)Chemical vapor depositionNanotechnologyChemistryOptoelectronicsOrganic chemistryQuantum mechanicsPhysicsSilicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesIntegrated Circuits and Semiconductor Failure Analysis