Induced ferromagnetism in bilayer hexagonal Boron Nitride (h-BN) on vacancy defects at B and N sites
B. Chettri, P. K. Patra, Tuan V. Vu, Cuong Q. Nguyen, Lalrinkima Lalrinkima, Abu Yaya, Kingsley Onyebuchi Obodo, Ngoc Thanh Thuy Tran, A. Laref, P. Raics
Topics & Concepts
Vacancy defectBilayerMaterials scienceCondensed matter physicsBoronBand gapFerromagnetismDensity functional theoryBoron nitridevan der Waals forceDielectricDensity of statesChemistryNanotechnologyComputational chemistryOptoelectronicsPhysicsOrganic chemistryMembraneBiochemistryMoleculeGraphene research and applicationsBoron and Carbon Nanomaterials ResearchDiamond and Carbon-based Materials Research