Revealing the anisotropic phonon behaviours of layered SnS by angle/temperature-dependent Raman spectroscopy
Xiangnan Gong, Ting Yan, Jue Li, Jie Liu, Hanjun Zou, Bin Zhang, Hong Wu, Zizhen Zhou, Xiaoyuan Zhou
Abstract
)-plane is consistent with the experimental values. The angle-resolved polarized Raman spectroscopy, combined with electron backscattered diffraction technology, is utilized to systematically investigate the in-plane anisotropy of the phonon response and then determine the in-plane orientation. Furthermore, the temperature-dependent and laser-power-dependent Raman scattering analyses reveal that the adjacent layers in the SnS crystals show a relatively weak van der Waals interaction. These findings could provide much-needed experimental information for future applications related to the anisotropic transport properties of SnS single crystals.