1.95-kV Beveled-Mesa NiO/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness
Feng Zhou, Hehe Gong, Weizong Xu, Xinxin Yu, Yang Xu, Yi Yang, Fangfang Ren, Shulin Gu, Youdou Zheng, Rong Zhang, Jiandong Ye, Hai Lu
Abstract
The technical progress of Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power diodes is now stuck at a critical point where a lack of performance evaluation and reliability validation at the system-level applications seriously limits their further development and even future commercialization. In this letter, by implementing beveled-mesa NiO/Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> p–n heterojunction diodes (HJDs) into a 500-W power factor correction (PFC) system circuit, high conversion efficiency of 98.5% with 100-min stable operating capability has been demonstrated. In particular, rugged reliability is validated after over 1 million times dynamic breakdown with a 1.2-kV peak overvoltage. Meanwhile, superior device performance is achieved, including a static breakdown voltage (BV) of 1.95 kV, a dynamic BV of 2.23 kV, a forward current of 20 A (2 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> current density), and a differential specific <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -resistance of 1.9 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . These results indicate that Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power HJDs are developing rapidly with their own advantages, presenting the enormous potential in high-efficiency, high-power, and high-reliability applications.