Influence of CMP damage induced during flattening SiC epitaxial layer on device performances
K. Masumoto, Junji Senzaki, Masaki Hasegawa, Kentaro Ohira, Kazutoshi Kojima, Kenji Kobayashi, Hajime Okumura
Topics & Concepts
Materials scienceEpitaxyFlatteningSilicon carbideOptoelectronicsChemical-mechanical planarizationDiodeLayer (electronics)PolishingComposite materialSilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesIntegrated Circuits and Semiconductor Failure Analysis