Characterization and Modeling of 0.18<i>μ</i>m Bulk CMOS Technology at Sub-Kelvin Temperature
Tengteng Lu, Zhen Li, Chao Luo, Jun Xu, Weicheng Kong, Guo‐Ping Guo
Abstract
Previous cryogenic electronics studies are mostly at 77K and 4.2K. Cryogenic characterization of a 0.18μm standard bulk CMOS technology (operating voltages: 1.8V and 5V) is presented in this paper. Several NMOS and PMOS devices with different width to length ratios (W/L) were extensively tested and characterized under various bias conditions at sub-kelvin temperature. In addition to devices dc characteristics, the kink effect and current overshoot phenomenon are observed and discussed at sub-kelvin temperature. Especially, the current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of MOSFET devices (1.8V W/L = 10μm/10μm) at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.