Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers
Hye Joo Lee, Hyun Woo Tak, Seong Bae Kim, Seul Ki Kim, Tae Hyun Park, Ji Yeun Kim, Dain Sung, Won‐Seok Lee, Seung Bae Lee, Keunsuk Kim, Byeong Ok Cho, Young Lea Kim, Ki Chan Lee, Dong Woo Kim, Geun Young Yeom, Young Lea Kim, Young Lea Kim, Ki Chan Lee, Dong Woo Kim, Geun Young Yeom
Topics & Concepts
FluorocarbonDissociation (chemistry)Etching (microfabrication)ChemistryOxygenMoleculeDielectricAmorphous solidAnalytical Chemistry (journal)PlasmaIonPlasma etchingLayer (electronics)Materials sciencePhysical chemistryCrystallographyOrganic chemistryOptoelectronicsPhysicsQuantum mechanicsPlasma Diagnostics and ApplicationsCopper Interconnects and ReliabilityMetal and Thin Film Mechanics