Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing
Qimiao Chen, Shaoteng Wu, Lin Zhang, Hao Zhou, W. J. Fan, Chuan Seng Tan
Abstract
at 2 μm wavelength at room temperature is obtained, which is more than two orders of magnitude higher than the reported values of the multiple-layer GeSn membrane photodetectors without cavities. The potential of the device for multi-spectral photodetection is demonstrated by tuning the responsivity spectrum with different NM thicknesses. Theoretical simulations are utilized to analyze and verify the mechanisms of responsivity enhancement. The approach can be applied to other GeSn-NM-based active devices, such as electro-absorption modulators or light emitters, presenting a new pathway towards heterogeneous group-IV photonic integrated circuits with miniaturized devices.