High-Performance Flexible Memristor Based on Electrospun Borophene-PVA Hybrid Nanofibers for Nonvolatile Memory Applications
Nishat Kumar Das, Sushmee Badhulika
Abstract
Flexible memristors have emerged as an exciting element for next-generation electronics due to their applications in neuromorphic computing, wearable and implantable electronics, and flexible memory systems thanks to their mechanical flexibility and biocompatibility. In this work, a hybrid nanofiber based on borophene and poly(vinyl alcohol) (PVA) is synthesized for use in flexible memristors, which are employed for nonvolatile memory applications with a Ag/borophene-PVA/ITO/PET configuration. The structure and morphology of the sonochemically synthesized borophene nanosheets and their composite-based nanofibers are confirmed by SEM and TEM, while the crystal structure and chemical composition are analyzed using XRD, Raman spectroscopy, and FTIR. The optimized Ag nanoparticle/borophene (20 wt %) and PVA hybrid nanofiber/ITO-coated PET device exhibits nonvolatile switching behavior. The SET voltage is ∼0.95 V, while the RESET voltage is ∼−1.33 V, which is comparatively lower than those of recently published composite-based flexible memristors. The memory device maintains excellent mechanical stability, even after 100 bending cycles. The high charge carrier mobility of borophene further reduces the switching voltage, while the dielectric properties of PVA enhance data retention and improve the on/off ratio. In the ON state, the resistive switching behavior follows a conductive metallic bridge mechanism with an Ohmic conduction. In the OFF state, the switching behavior is governed by trap-controlled space charge-limited current. This mechanism is highly beneficial for potential applications in flexible, high-performance nonvolatile memory systems.