Enhanced Simulation and RF Performances Comparison of NEMS Shunt and Series Configurations for Phased Array Systems
Anitha Gopalan
Abstract
This article focuses on simulating and comparing the performance of two types of Radio Frequency Nano Electro Mechanical Systems (RF NEMS) switches—shunt and series— designed for phased array systems. The study evaluates key parameters, including S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</inf> (return loss) and S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</inf> (insertion loss), to determine their effectiveness in high-frequency applications. Using HFSS software, 56 samples were analyzed, divided into two groups of 28, with a pretest power of 80% to ensure reliable results. Findings revealed that the NEMS shunt switch demonstrated superior performance, achieving an impressive S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</inf> of -52.28 dB and S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</inf> of -0.13 dB at frequencies up to 80 GHz. In comparison, the NEMS series switch showed lower performance levels. Statistical analysis (p = 0.000, p < 0.05) validated the significance of these results, confirming the NEMS shunt switch as a highly efficient choice for phased array systems. This study highlights the potential of RF NEMS technology in delivering low insertion loss and excellent return loss, making it ideal for modern, high-frequency communication systems.