Litcius/Paper detail

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang, Cheng‐Hsiang Hsu, Shang‐Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gómez, Wriddhi Chakraborty, Wenshen Li, Jong‐Ho Bae, Steve Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, J. W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seung‐Geol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, R. Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mokhtar Mohamed, Chenming Hu, Sayeef Salahuddin

2022Nature348 citationsDOIOpen Access PDF

Topics & Concepts

SuperlatticeStack (abstract data type)TransistorOptoelectronicsMaterials scienceNanotechnologyComputer scienceElectrical engineeringEngineeringProgramming languageVoltageFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors | Litcius