Physical reservoirs based on MoS<sub>2</sub>–HZO integrated ferroelectric field-effect transistors for reservoir computing systems
Lingqi Li, Heng Xiang, Haofei Zheng, Yu‐Chieh Chien, Ngoc Thanh Duong, Jing Gao, Kah‐Wee Ang
Abstract
-HZO integrated device structure with enhanced spontaneous polarization field. By adjusting the oxygen vacancy concentration, the devices exhibit consistent responses to both identical and nonidentical voltages, making them suitable for diverse RC applications. The high accuracy of MNIST handwritten digits recognition highlights the rich reservoir states of the traditional RC architecture. Additionally, the impact of masks on RC implementation is assessed, showcasing the device's capability for spatiotemporal signal analysis. This development paves the way for implementing energy-efficient and high-performance computing solutions.
Topics & Concepts
FerroelectricityTransistorField-effect transistorReservoir computingMaterials scienceOptoelectronicsField (mathematics)Computer scienceElectrical engineeringEngineeringVoltageDielectricArtificial intelligenceArtificial neural networkRecurrent neural networkMathematicsPure mathematicsFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingNeural Networks and Reservoir Computing