Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy
M. Némoz, F. Sèmond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche, J. Zúñiga‐Pérez
Topics & Concepts
Molecular beam epitaxySuperlatticeAnnealing (glass)Materials scienceDiffusionSiliconTransmission electron microscopyDiffractionAnalytical Chemistry (journal)EpitaxyElectron diffractionAluminiumCrystallographyLayer (electronics)ChemistryOpticsOptoelectronicsNanotechnologyComposite materialChromatographyPhysicsThermodynamicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties