Switching the fracture toughness of single-crystal ZnS using light irradiation
Tingting Zhu, Kuan Ding, Yu Oshima, Anahid Amiri, Enrico Bruder, Robert W. Stark, Karsten Durst, Katsuyuki Matsunaga, Atsutomo Nakamura, Xufei Fang
Abstract
An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ∼45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.