Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing
Abdelouadoud El Mesoudy, Gwénaëlle Lamri, Raphaël Dawant, Javier Arias‐Zapata, Pierre Gliech, Yann Beilliard, Serge Ecoffey, Andreas Ruëdiger, Fabien Alibart, Dominique Drouin
Abstract
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.