Identification of origin of <i>E</i> <sub>C</sub> –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy
Masahiro Horita, Tetsuo Narita, Tetsu Kachi, Jun Suda
Abstract
The origin of E3 electron traps at EC –0.58 eV in GaN was investigated using Si-doped n-type GaN layers grown on freestanding GaN substrates using MOVPE. These layers contained impurity Fe at various concentrations depending on the growth conditions and the position within the wafer. Twenty E3 concentrations (NT,E3) determined by deep-level transient spectroscopy were plotted against the corresponding Fe concentrations ([Fe]) obtained from secondary ion mass spectrometry. A correlation was evident between NT,E3 and [Fe] in the range (0.4–12) × 1015 cm–3, suggesting that the E3 level in MOVPE-grown homoepitaxial GaN originates from the substitution of Fe atoms at Ga sites.
Topics & Concepts
Metalorganic vapour phase epitaxyWaferImpurityAnalytical Chemistry (journal)Substrate (aquarium)Materials scienceDopingSecondary ion mass spectrometrySecondary Ion Mass SpectroscopyIonDeep-level transient spectroscopyChemistrySiliconOptoelectronicsEpitaxyNanotechnologyLayer (electronics)GeologyOceanographyOrganic chemistryChromatographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials