The effect of in-doping on the quantum information entropy of hydrogenic impurity states in the In<sub>x</sub>Ga<sub>1-x</sub>N semiconductor quantum dot
Xue Liu, Xin‐yu Xie, Dehua Wang, Chen-lu Wang, Yulin Zhao, Shufang Zhang
Abstract
The effect of In-doping on the quantum information entropy of the hydrogenic impurity states in the InxGa1-xN quantum dot has been studied for the first time. By exploring the Shannon entropy in the position space (Sr), in the momentum-space (Sp) and the Shannon entropy sum St, we find some novel and interesting phenomenon. First, although Sr increases and Sp decreases monotonically with the radius of InxGa1-xN quantum dot, the Shannon entropy sum St exhibits a series of peaks and valleys with the confinement radius. The physical origin of the minimum and maximum values in the Shannon entropy sum St is analysed in great detail. Second, the BBM entropy uncertainty principle (St≥3[1+ln(π)]) holds for the hydrogenic impurity state in the semiconductor quantum dot, which can be used to replace the Heisenberg uncertainty principle in the quantum mechanics. Third, the content of the doping In element in the InxGa1-xN quantum dot has a great influence on the Shannon entropy of the hydrogenic impurity state. Since the Shannon entropy sum St is usually used to measure the position-momentum correlation, therefore, we can explore the uncertainty of position and momentum of the hydrogenic impurity states by changing the content of the doping element in the semiconductor quantum dots. This study has some practical applications in semiconductor material and quantum information measurement, and may guide future experimental researches for the localisation and delocalisation characteristics of hydrogenic impurities states in the semiconductor quantum dots.