Perspective on the switching behavior of HfO2-based ferroelectrics
Chenxi Wang, Huimin Qiao, Yunseok Kim
Abstract
Since ferroelectricity was first observed in 2011, HfO2-based ferroelectrics have garnered significant attention, owing to their compatibility with complementary metal–oxide–semiconductors. Moreover, their thickness scalability facilitates the miniaturization of integrated circuit systems. The ultrafast polarization switching speed in the range of sub-nanoseconds helps in the fabrication of fast-operation devices. The origins of ferroelectricity in HfO2-based ferroelectrics differ from those of conventional perovskite ferroelectrics, with more complex behaviors associated with polarization switching. In this Perspective, recent investigations on the complex behaviors pertaining to polarization switching, including wake-up, split-up, fatigue, negative capacitance, accumulative switching, and some of their relations are discussed. Furthermore, the polarization switching dynamics have also been studied. Finally, the potential applications and investigations of HfO2-based ferroelectrics are discussed.