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Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD

Thanh Huong Vo, Sunjae Kim, Hyeong-Yun Kim, Ji-Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang

2024Materials Science in Semiconductor Processing11 citationsDOI

Topics & Concepts

Materials scienceMetalorganic vapour phase epitaxyEpitaxyOptoelectronicsSchottky diodeLayer (electronics)Schottky barrierDiodeChemical vapor depositionAnalytical Chemistry (journal)NanotechnologyChemistryChromatographyGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides
Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD | Litcius