Phase transitions and microwave dielectric behaviors of the (Bi <sub>1−</sub> <i> <sub>x</sub> </i> Li <sub>0.5</sub> <i> <sub>x</sub> </i> Y <sub>0.5</sub> <i> <sub>x</sub> </i> )(V <sub>1−</sub> <i> <sub>x</sub> </i> Mo <i> <sub>x</sub> </i> )O <sub>4</sub> ceramics
Li‐Xia Pang, Di Zhou, Xiaogang Yao, Huixing Lin, Chen Chen, Zhongqi Shi, Fayaz Hussain, Moustafa A. Darwish, Tao Zhou, Shi‐Kuan Sun, Qi‐Xin Liang, Ya‐Wei Chen
Abstract
Abstract Microwave dielectric ceramics with intrinsic low sintering temperatures are potential candidates for low temperature co‐fired ceramics technology. In the present work, the (Li 0.5 Y 0.5 )MoO 4 ceramic with tetragonal scheelite structures was selected to improve microwave dielectric properties of BiVO 4 ceramics. As proved by X‐ray diffraction (XRD) results, scheelite structured solid‐solution ceramics were formed with x value ≤0.1 in the (Bi 1− x Li 0.5 x Y 0.5 x )(V 1− x Mo x )O 4 . In situ XRD results further confirmed that the addition of (Li 0.5 Y 0.5 )MoO 4 also lowered transition temperature from distorted monoclinic to tetragonal scheelite structure. When x value increased further, zircon phase was detected by XRD. Room and high‐temperature Raman spectra also supported the XRD results. Differences of thermal expansion coefficients of both monoclinic and tetragonal scheelite phases lead to an abnormality at phase transition temperature. Good microwave dielectric properties with permittivity above 70 and Qf ( Q = quality factor = 1/dielectric loss and f = frequency) value above 8000 GHz were obtained in the (Bi 1− x Li 0.5 x Y 0.5 x )(V 1− x Mo x )O 4 solid‐solution ceramics with x value ≤0.1 sintered below 800°C. However, permittivity peak values at phase transition temperatures lead to large positive or negative temperature coefficient of resonant frequency, and this needs to be modified via composite technologies in the future.