High-performance resistive switching memory with embedded molybdenum disulfide quantum dots
Xinna Yu, Ke Chang, Anhua Dong, Zhikai Gan, Kang’an Jiang, Yibin Ling, Yiru Niu, Diyuan Zheng, Xinyuan Dong, WANG REN-ZHI, Yizhen Li, Zhuyikang Zhao, Peng Bao, Binbin Liu, Yuhong Cao, Su Hu, Hui Wang
Abstract
With the advent of the big-data era, conventional memory technologies and devices are facing enormous challenges. Resistive random access memory (RRAM) is an emerging memory technology that has aroused widespread interest for its immense potential. However, there remain some problems in resistive switching devices, such as high switching voltages, random voltages distribution, wide variation in resistance states, and poor endurance. In this work, molybdenum disulfide quantum dots are applied to resistive switching devices. The resulting devices exhibit improved performance. They have ultra-low and centralized switching voltages, uniformly distributed resistance states, good endurance, and extremely large on/off ratios. This performance optimization may derive from the convergence of electric field distribution around molybdenum disulfide quantum dots, which enhances the formation of localized conductive filaments. In this Letter, we propose an approach for improving resistive switching properties, significantly facilitating the development of data storage and related applications.