P-type nitrogen-doped β-Ga<sub>2</sub>O<sub>3</sub>: the role of stable shallow acceptor N<sub>O</sub>–V<sub>Ga</sub> complexes
Congcong Ma, Zhengyuan Wu, Hao Zhang, Heyuan Zhu, Junyong Kang, Junhao Chu, Zhilai Fang
Abstract
-V-Ga(I), an emission peak at 385 nm with a Franck-Condon shift of 1.08 eV is predicted. These findings are of general scientific significance as well as technological application significance for p-type doping of ultrawide-bandgap oxide semiconductors.
Topics & Concepts
AcceptorNitrogenDopingCrystallographyCoulombBinding energyChemistryMaterials scienceAnalytical Chemistry (journal)Atomic physicsPhysicsCondensed matter physicsOptoelectronicsElectronOrganic chemistryChromatographyQuantum mechanicsGa2O3 and related materialsElectronic and Structural Properties of OxidesZnO doping and properties