Atomically Precise Control of Carbon Insertion into hBN Monolayer Point Vacancies using a Focused Electron Beam Guide
Hyoju Park, Yi Wen, Sylvia Xin Li, Woojin Choi, Gun‐Do Lee, Michael S. Strano, Jamie H. Warner
Abstract
Precise controlled filling of point vacancies in hBN with carbon atoms is demonstrated using a focused electron beam method, which guides mobile C atoms into the desired defect site. Optimization of the technique enables the insertion of a single C atom into a selected monovacancy, and preferential defect filling with sub-2 nm accuracy. Increasing the C insertion process leads to thicker 3D C nanodots seeded at the hBN point vacancy site. Other light elements are also observed to bind to hBN vacancies, including O, opening up a wide range of complex defect structures that include B, C, N, and O atoms. The ability to selectively fill point vacancies in hBN with C atoms provides a pathway for creating non-hydrogenated covalently bonded C molecules embedded in the insulating hBN.