An Fe-doped ZnO/BiVO<sub>4</sub> heterostructure-based large area, flexible, high-performance broadband photodetector with an ultrahigh quantum yield
Sushmitha Veeralingam, Pinki Yadav, Sushmee Badhulika
Abstract
with very high EQE values of 2501.7%, 851.2% and 28.3%, respectively. The facile and cost-effective fabrication of the device with high performance provides a new approach for developing flexible electronics and high-performance optoelectronic devices.
Topics & Concepts
Materials sciencePhotodetectorOptoelectronicsHeterojunctionResponsivityQuantum efficiencyQuantum yieldPhotodetectionDopingBand gapFabricationSemiconductorOpticsPhysicsFluorescenceAlternative medicineMedicinePathologyGa2O3 and related materialsGas Sensing Nanomaterials and SensorsZnO doping and properties