Research progress of optoelectronic devices based on two‐dimensional MoS <sub>2</sub> materials
Liangrui Zou, Dandan Sang, Yu Yao, Xueting Wang, Yuan‐Yuan Zheng, Naizhou Wang, Cong Wang, Qinglin Wang
Abstract
Abstract Molybdenum disulfide (MoS 2 ) is a widely used optoelectronic material with exceptional electrical, magnetic, optical, and mechanical properties. Due to the quantum confinement effect, high absorption coefficient, high surface‐volume ratio, and tunable bandgap, nano‐MoS 2 ‐based devices exhibit size‐dependent and novel optoelectronic properties, such as excellent photoluminescence and high anisotropic electrical, mechanical, and thermal properties. This review focuses mainly on the latest progress of optoelectronic device applications based on two‐dimensional (2D) nano‐MoS 2 . Various advanced devices, such as sensors, photodetectors, light‐emitting diodes (LEDs), memory applications, and field‐effect transistors (FETs) are considered. The review will provide a new perspective in promoting the development of 2D nanomaterial‐based photoelectric applications.