Black Phosphorus Nanoribbons: From Synthesis to Applications
Wei Zhang, Jin Wang, Xiaofen Zhong, Xuan Zhang
Abstract
Black phosphorus (BP) has emerged as a promising 2D semiconductor due to its tunable bandgap, strong in-plane anisotropy, and high carrier mobility. The recent development of black phosphorus nanoribbons (PNRs), quasi-1D derivatives of BP, has introduced new opportunities for nano-electronics, quantum materials, and energy applications. The transition from 2D to 1D nanostructures induces significant modifications in electronic structure, excitonic behavior, and charge transport, making PNRs a versatile platform for both fundamental studies and technological innovations. Advances in synthesis techniques, including electron-beam lithography, liquid exfoliation, chemical vapor transport, and molecular beam epitaxy, have enabled the fabrication of high-quality PNRs with precisely controlled dimensions and edge structures. These breakthroughs have facilitated their application in field-effect transistors, solar cells, catalysis, and energy storage. Despite rapid progress, challenges remain in achieving scalable synthesis, stability enhancement, and precise control over edge states and functionalization. This review provides a comprehensive assessment of PNRs, covering their structural characteristics, fundamental physics properties, synthesis strategies, and emerging applications. Current challenges and future perspectives are discussed, aiming to guide the continued advancement of this rapidly evolving field.