Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot
Xin Zhang, Rui-Zi Hu, Hai-Ou Li, Fang‐Ming Jing, Yuan Zhou, Rong-Long Ma, Ming Ni, Gang Luo, Gang Cao, Guilei Wang, Xuedong Hu, Hong-Wen Jiang, Guang‐Can Guo, Guo‐Ping Guo
Abstract
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot," the electron spin relaxation rate (T_{1}^{-1}) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2±1.6 μeV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.5±0.7 μeV.