Beam test results of 25 and 35 $$\mu$$m thick FBK ultra-fast silicon detectors
F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, D. Cavazza, G.‐F. Dalla Betta, S. Durando, M. Ferrero, F. Ficorella, O. Hammad Alì, M. Mandurrino, A. Margotti, Luca Menzio, R. Nania, Lucio Pancheri, G. Paternoster, G. Scioli, F. Siviero, V. Sola, M. Tornago, Giorgio Vignola
Abstract
Abstract This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 and 35 $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> m and an area of 1 $$\times$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mo>×</mml:mo> </mml:math> 1 $$\text {mm}^2$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup> <mml:mtext>mm</mml:mtext> <mml:mn>2</mml:mn> </mml:msup> </mml:math> have been considered, together with an additional HPK 50- $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 and 240 V has been obtained for the 25 and 35 $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> m thick UFSDs, respectively.