Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications
Han Wui Then, M. Radosavljević, Qiang Yu, Alvaro D. Latorre-Rey, Heli Vora, Samuel James Bader, Ibukunoluwa Momson, David Thomson, Michael Beumer, Pratik Koirala, J. Peck, A. Oni, T. Hoff, R. Jordan, Thoe K. Michaelos, N. Nair, P. Nordeen, A. Vyatskikh, Ibrahim Ban, Ahmad Zubair, Said Rami, P. Fischer
Abstract
A 300-mm GaN-on-Si(111) high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> gate dielectric E-mode GaN MOSHEMT technology is demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L_{\mathrm {G}}$ </tex-math></inline-formula> = 90 nm, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L_{\mathrm {GS}}$ </tex-math></inline-formula> = <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L_{\mathrm {GD}}$ </tex-math></inline-formula> = 80 nm, is enabled by 300-mm process capabilities in deep U (DUV) lithography, MOCVD, atomic layer etch (ALE), atomic layer deposition (ALD), and Cu interconnect. The GaN MOSHEMT shows excellent ON/OFF characteristics, low leakages, low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\mathrm {on}}$ </tex-math></inline-formula> , high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{\mathrm {D}}$ </tex-math></inline-formula> , and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {MAX}}$ </tex-math></inline-formula> of 140/280 GHz. A 42-GHz mm-Wave power amplifier (PA) fabricated in this process for the first time demonstrates a saturated power of 25.6 dBm, a linear gain of 22.5 dB, and a PAE of 35.7%. In this technology, high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {MAX}}$ </tex-math></inline-formula> is obtained by scaling to thin equivalent oxide thickness (EOT) and short <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L_{\mathrm {G}}$ </tex-math></inline-formula> , and high breakdown is achieved with extended <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L_{\mathrm {GD}}$ </tex-math></inline-formula> and field plating. Si CMOS can be integrated with this GaN technology using 3-D layer transfer and does not alter the RF performance of the GaN MOSHEMT. Record <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{\mathrm {MAX}}$ </tex-math></inline-formula> = 700 GHz ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{T}$ </tex-math></inline-formula> = 115 GHz) is obtained with an <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L_{\mathrm {G}}$ </tex-math></inline-formula> = 50 nm GaN MOSHEMT with submicrometer source field plate (FP) fabricated using this 300-mm GaN MOSHEMT process with integrated Si CMOS. Finally, progress on process design kit (PDK) development for this technology is reported.