Paper‐Based Lead Sulfide Quantum Dot Heterojunction Photodetectors
Cong Zhang, Xingtian Yin, Guojiang Qian, Gaocheng Chen, Shoaib Iqbal, Wenxiu Que
Abstract
Abstract Paper‐based photodetectors have emerged as reliable candidates for wearable electronics due to their low‐cost, degradability and excellent bending properties. However, the application of quantum dots (QDs) to paper‐based devices remains a challenge due to the low carrier mobility. In this work, lead sulfide (PbS) QDs are successfully applied to paper‐based devices by constructing the amorphous indium gallium zinc oxide (a‐IGZO)/PbS QDs‐EDT heterojunction to enhance the photoconductive gain of the QDs film. The effect of different paper substrates are investigated on device performance and demonstrate that the heterojunction is not suitable for the fiber‐like paper substrate. Heterojunction devices based on Senyan paper and glass paper exhibit stable detection performance with detectivity of 1.71 × 10 10 and 3.19 × 10 11 Jones, respectively. Benefit from the unique micro‐morphology, the Senyan paper‐based device exhibits excellent bending resistance and remained stable after 1000 bends.