<b> <i>β</i> </b>-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy
Ashok Dheenan, Joe F. McGlone, Nidhin Kurian Kalarickal, Hsien‐Lien Huang, Mark Brenner, Jinwoo Hwang, Steven A. Ringel, Siddharth Rajan
Abstract
In this work, we develop in situ Mg doping techniques in plasma-assisted molecular beam epitaxy (PAMBE) of β-Ga2O3 to compensate Si dopants at the substrate epilayer growth interface and eliminate parasitic leakage paths. Both abrupt and uniform Mg doping profiles over a wide range of concentrations were achieved in β-Ga2O3 epilayers grown by PAMBE. Capacitance–voltage characteristics of Si and Mg co-doped samples confirmed the compensating effect of the Mg dopants. Mg delta-doping was then integrated into a β-Ga2O3 metal-semiconductor field effect transistor structure and shown to be effective in eliminating source leakage. The results presented here show that Mg doping is a promising way to engineer insulating buffer layers for β-Ga2O3 lateral devices grown by PAMBE.