Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
Borish Moirangthem, Ph. Nonglen Meitei, Anil K. Debnath, Naorem Khelchand Singh
Topics & Concepts
Resistive random-access memoryX-ray photoelectron spectroscopyMaterials scienceAmorphous solidOhmic contactAnalytical Chemistry (journal)Thin filmTransmission electron microscopyOptoelectronicsEvaporationSpace chargeVoltageNanotechnologyLayer (electronics)ElectronChemistryElectrical engineeringNuclear magnetic resonanceThermodynamicsEngineeringPhysicsOrganic chemistryQuantum mechanicsChromatographyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices