Tunable Valley Splitting and Bipolar Operation in Graphene Quantum Dots
Chuyao Tong, Rebekka Garreis, Angelika Knothe, Marius Eich, A. Riccardi Sacchi, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Fal’ko, Thomas Ihn, K. Ensslin, Annika Kurzmann
Abstract
Quantum states in graphene are 2-fold degenerate in spins, and 2-fold in valleys. Both degrees of freedom can be utilized for qubit preparations. In our bilayer graphene quantum dots, we demonstrate that the valley g-factor gv, defined analogously to the spin g-factor gs for valley splitting in a perpendicular magnetic field, is tunable by over a factor of 4 from 20 to 90, by gate voltage adjustments only. Larger gv results from larger electronic dot sizes, determined from the charging energy. On our versatile device, bipolar operation, charging our quantum dot with charge carriers of the same or the opposite polarity as the leads, can be performed. Dots of both polarities are tunable to the first charge carrier, such that the transition from an electron to a hole dot by the action of the plunger gate can be observed. Addition of gates easily extends the system to host tunable double dots.