Litcius/Paper detail

Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components

K. Manikanta, Umakanta Nanda, Chandan Kumar Pandey

2024Microelectronics Journal12 citationsDOI

Topics & Concepts

Quantum tunnellingSubthreshold conductionChannel (broadcasting)PhysicsTunnel field-effect transistorTransistorOptoelectronicsVoltageField-effect transistorElectronic engineeringElectrical engineeringEngineeringQuantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications
Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components | Litcius