Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
Esteban Garzón, Raffaele De Rose, Felice Crupi, Lionel Trojman, Giovanni Finocchio, Mario Carpentieri, Marco Lanuzza
Topics & Concepts
Magnetoresistive random-access memoryCacheSpin-transfer torqueComputer scienceEmbedded systemElectronic engineeringElectrical engineeringEngineeringRandom access memoryComputer hardwareParallel computingMagnetizationMagnetic fieldQuantum mechanicsPhysicsMagnetic properties of thin filmsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices