A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation
Navnidhi K. Upadhyay, Wen Sun, Peng Lin, Saumil Joshi, Rivu Midya, Xumeng Zhang, Zhongrui Wang, Hao Jiang, Jung Ho Yoon, Mingyi Rao, Miaofang Chi, Qiangfei Xia, J. Joshua Yang
Abstract
Abstract Memristor devices could realize their full scaling (2D) and stacking (3D) potential if vertically integrated with a two‐terminal selector in a one selector one memristor (1S1R) crossbar array. However, for a 1S1R‐integrated device to function properly, memristor and selector should be compatible in terms of their material composition and electrical properties. A platinum (Pt)/yttria‐stabilized zirconia (YSZ)/zirconium (Zr) memristor with low forming voltage (<1.5 V), low first reset current (150 µA), fast switching speed (2 ns), low voltage (<1 V) and current (50 µA) resistive switching operation, and multi‐conductance state capabilities is reported. A low activation energy of oxygen vacancy diffusion ( E a,diffusion = 0.7 eV) measured in the YSZ switching layer enables the proposed memristor to have the observed low‐energy operation, which renders it better compatible with a selector device than the more commonly used binary oxides. For a proof‐of‐principle demonstration, the device is vertically integrated with a tunneling selector and successfully performs memristor‐electroforming operations with the selector in a self‐compliant 1S1R integrated device. 1S1R cells into a small array (2 × 2) are further investigated and electroforming and resistive switching operations at the array level are demonstrated.