Size- and Phase-Controlled Nanometer-Thick β-Ga<sub>2</sub>O<sub>3</sub> Films with Green Photoluminescence for Optoelectronic Applications
Nanthakishore Makeswaran, Debabrata Das, Vishal Zade, Paul Gaurav, V. Shutthanandan, Susheng Tan, C.V. Ramana
Abstract
Realization and optimization of the tunable/enhanced optical properties are critical to further advancing the fields of optoelectronics, photonics, and nanoelectronics. In this context, here, we demonstrate green-emission characteristics with a ∼30-fold enhancement in selectively engineered nanocrystalline Ga2O3 with control over the size, phase, and interface nanostructure. Pulsed-laser-deposited β-phase Ga2O3 films with an average crystallite size of ∼9 nm along with a highly dense, close-compact nanocolumnar structure with the lowest possible defect density facilitate the 30-fold enhancement in the photoluminescence (PL) intensity in the green region. Enhanced PL emission in the optimized, engineered nanoarchitecture sheds light on the design of Ga2O3 materials for promising future optoelectronic/photocatalytic applications.