A possible origin of the large leakage current in ferroelectric Al <sub> 1− <i>x</i> </sub> Sc <sub> <i>x</i> </sub> N films
Junji Kataoka, Sung‐Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima
Abstract
Abstract Leakage current analysis on 50 nm thick ferroelectric Al 0.78 Sc 0.22 N films with TiN electrodes has been performed. The electron conduction followed Schottky emission with an initial Schottky barrier height ( ϕ B ) of 0.46 eV. During the initial switching, a gradual shift in the leakage current was observed, changing the ϕ B to 0.36 eV, and stayed constant for further switching cycles. From the extracted Richardson constant, the change in the ϕ B can be interpreted as the formation of a tunneling barrier due to the formation of nitrogen vacancies at the metal interface.
Topics & Concepts
FerroelectricityQuantum tunnellingSchottky diodeTinSchottky barrierMaterials scienceLeakage (economics)Schottky effectCondensed matter physicsElectrodeAnalytical Chemistry (journal)OptoelectronicsChemistryDielectricPhysicsMetallurgyPhysical chemistryChromatographyMacroeconomicsDiodeEconomicsAcoustic Wave Resonator TechnologiesSemiconductor materials and devicesMetal and Thin Film Mechanics