High on/off ratio SiO<sub>2</sub>-based memristors for neuromorphic computing: understanding the switching mechanisms through theoretical and electrochemical aspects
Fei Qin, Yuxuan Zhang, Ziqi Guo, Tae Joon Park, Hongsik Park, Chung Soo Kim, Jeong-Min Park, Xingyu Fu, Kwangsoo No, Han Wook Song, Xiulin Ruan, Sunghwan Lee
Abstract
Finite element analysis provides visual insights into conductive path evolution in a SiO 2 -based memristor. Electrochemical impedance spectroscopy experimentally validated the theoretical findings by interpreting with an equivalent circuit.
Topics & Concepts
Neuromorphic engineeringMemristorDielectric spectroscopyPath (computing)ElectrochemistryElectrical impedanceMaterials scienceElectrical conductorOptoelectronicsElectronic engineeringComputer scienceNanotechnologyPhysicsElectrical engineeringArtificial intelligenceArtificial neural networkEngineeringElectrodeComposite materialQuantum mechanicsProgramming languageAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringPhotoreceptor and optogenetics research