Reliability and entropy production in nonequilibrium electronic memories

Abstract

We find the relation between reliability and entropy production in a realistic model of electronic memory (low-power metal-oxide-semiconductor-based SRAM) where logical values are encoded as metastable nonequilibrium states. We employ large deviation techniques to obtain an analytical expression for the bistable quasipotential describing the nonequilibrium steady state and use it to derive an explicit expression bounding the error rate of the memory. Our results go beyond the dominant contribution given by classical instanton theory and provide accurate estimates of the error rate as confirmed by comparison with stochastic simulations.

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