Observation of the Fluctuation Spin Hall Effect in a Low-Resistivity Antiferromagnet
Chi Fang, Caihua Wan, Xiaoyue Zhang, Satoshi Okamoto, Tianyi Ma, Jianying Qin, Xiao Wang, Chenyang Guo, Jing Dong, Guoqiang Yu, Zhenchao Wen, Ning Tang, S. Parkin, Naoto Nagaosa, Yuan Lü, Xiufeng Han
Abstract
The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce the power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase transition in chromium (Cr) is proven to be an effective mechanism for creating an additional part of the SHE, named the fluctuation spin Hall effect. The SHA is significantly enhanced when the temperature approaches the Néel temperature ( T N ) of Cr and has a peak value of −0.36 near T N . This value is higher than the room-temperature value by 153% and leads to a low normalized power consumption among known spin–orbit torque materials. This study demonstrates the critical spin fluctuation as a prospective way to increase the SHA and enriches the AFM material candidates for spin–orbitronic devices.