A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions
Ning Feng, Hao Li, Lining Zhang, Vincent Ji, Fangxing Zhang, Xiaobao Zhu, Zongwei Shang, Puyang Cai, Ming Li, Runsheng Wang, Ru Huang
Abstract
In this letter, we proposed a dynamic compact model for metal-ferroelectric-semiconductor (MFS) ferroelectric tunnel junctions (FTJ) based on their device physics. The voltage control over dynamic polarizations and the semiconductor surface potentials is achieved for full-region operations, supporting complex FTJ state transitions. A unified and smooth current model across different regions was proposed by formulating tunneling transports in FTJ with complicated barrier shapes from the first-principle tunneling theory. The model was extensively verified with both experimental data and technology computer-aided design (TCAD) simulations, featuring accurate descriptions of multi-states, frequency dependent programming, and circuit simulations.