Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing
Turgun Boynazarov, Joonbong Lee, Hojin Lee, Sangwoo Lee, Hyunbin Chung, Dae Haa Ryu, Haider Abbas, Taekjib Choi
Topics & Concepts
Neuromorphic engineeringMemristorMaterials scienceLayer (electronics)Reservoir computingOptoelectronicsComputer scienceNanotechnologyArtificial neural networkElectronic engineeringEngineeringArtificial intelligenceRecurrent neural networkAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering